ECH8662
Embossed Taping Speci ? cation
ECH8662-TL-H
No. A1259-5/7
相关PDF资料
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
ECH8668-TL-H MOSFET N/P-CH 20V 7.5A ECH8
ECH8671-TL-H MOSFET P-CH DUAL 12V 3.5A ECH8
ECH8672-TL-H MOSFET P-CH DUAL 20V 3.5A ECH8
ECH8675-TL-H MOSFET P-CH DUAL 20V 4.5A ECH8
EE-1005 CONNECTOR FOR PHOTOSENSORS
EE-SB5 SENSR OPTO TRANS 5MM REFL SOLDER
EE-SF5 SENSR OPTO TRANS 5MM REFL SOLDER
相关代理商/技术参数
ECH8663R 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8663R_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8663R-TL-H 功能描述:MOSFET PCH+PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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ECH8664R-TL-H 功能描述:MOSFET N-CH DUAL 30V 7A ECH8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
ECH8667 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8667_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications